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3rd Generation Semiconductor for New Energy Vehicles Development
Date: 14 August 2024
Time: 4:00 p.m. – 5:30 p.m
Venue: HKSTP
Details: As vehicle technology continues to advance, third-generation semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are playing a critical role in new energy vehicle systems. Compared to traditional silicon semiconductors, SiC and GaN have higher bandgaps, better high-temperature tolerance and higher frequency characteristics, which can significantly improve the efficiency of power systems and reduce power consumption and weight.
These excellent performance characteristics have brought revolutionary improvements to new energy vehicles. Driving range has increased significantly; acceleration performance is more outstanding; and the overall vehicle is lighter and safer. Third-generation semiconductors are becoming a key driving force to propel new energy vehicles towards a more efficient and smarter future.
Session 1: EV Charging Technology Development Trend
Dr River Li, Director, Advanced Electronic Components and Systems, ASTRI
Session 2: 3rd Gen Semiconductor in New Energy Vehicle and on 6G Wireless Applications
Dr Xinyu Zhou, Research Assistant Professor, Department of Electronic and Information Engineering, The Hong Kong Polytechnic University
Session 3: DFT and Judging Criteria Analysis in Power Cycle of Electric Drive
Dr Allen Zhou, Co-founder, Luology
