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New Generation Semiconductor Power Module
Date: 28 March 2024
Time: 2:30p.m.-4:05p.m.
Venue: HKSTP
Details: As carbon neutrality has become a global consensus , there has been a notable surge in emphasis on energy efficiency and environmental sustainability. The high performance, reliability, and energy-saving characteristics of semiconductor power modules have become key factors driving towards sustainable development.
ASTRI has invited three industry experts to delve into the prospects of next-generation power electronic devices and systems for future development of buildings and transportation, the application of smart power, and the technology and SiC MOSFET Technical Challenges of Trench Processing. By unleashing a fresh momentum in the power system industry, propelling transformative changes and unlocking new opportunities.
Session 1: The prospect of next-generation power electronic devices and systems that meet the future development of buildings, transportation, and energy integration
Dr. Yang Chao, Director, Smart Energy and Systems, ASTRI, Royal Chartered Engineer of the Institution of Engineering and Technology
Session 2 :Smart power: Component unit assisted topology, application, and intelligence
Dr. Yao Jilong, R&D Director, Siemens (China) Co., Ltd
Session 3 :Technical challenges of the SiC FET trench process
Mr. Tam Chi Ming, Chief Executive Officer of Huazhi Technology (International) Co., Ltd. and Chief Executive Officer of Zhongdian Semiconductor (Shenzhen) Co., Ltd
